Characterization of Defects in III-V Semiconductor Materials (InP, GaAs and InGaAs/ InP on Si) in Nano-sized Patterns by Transmission Electron Microscopy
نویسندگان
چکیده
منابع مشابه
Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layers
Optical absorption spectra and transmission electron microscopy (TEl\iI) observations-on In&As/ InP layers under compressive strain are reported. From the band-gap energy dispersion, the magnitude of the strain inhomogeneities, Us, is quantified and its microscopic origin is analyzed in view of the layer microstructure. TEM observations reveal a dislocation network at the layer interface the de...
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ژورنال
عنوان ژورنال: Microscopy and Microanalysis
سال: 2016
ISSN: 1431-9276,1435-8115
DOI: 10.1017/s1431927616008540